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| d1 n-channel mosfet p-channel mosfet d1 d2 d2 g1s2 g2 s1 top view 8 12 3 4 5 6 7 features advanced planar technology ultra low on-resistance logic level gate drive dual n and p channel mosfet surface mount available in tape & reel 150c operating temperature automotive [q101] qualified* lead-free , rohs compliant specifically designed for automotive applications, these hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremely low on-resistance per silicon area. additional features of these automotive qualified hexfet power mosfet's are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. so-8 absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress rating s only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is no t implied.exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. gds gate drain source hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ units n-channel p-channel v ds drain-source voltage 55 -55 v i d @ t a = 25c continuous drain current, v gs @ 10v 4.7 -3.4 i d @ t a = 70c continuous drain current, v gs @ 10v 3.8 -2.7 i dm pulsed drain current 38 -27 p d @t a = 25c power dissipation p d @t a = 70c power dissipation e as single pulse avalanche energy 72 114 mj i ar avalanche current 4.7 -3.4 a e ar repetitive avalanche energy mj v gs gate-to-source voltage v dv/dt peak diode recovery dv/dt 5.0 -5.0 v/ns t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient CCC 62.5 c/w parameter 2.0 1.3 max. w 0.20 a c 20 -55 to + 150 n-ch p-ch v (br)dss 55v -55v r ds(on) typ. 0.043 0.095 max. 0.050 0.105 i d 4.7a -3.4a automotive grade form quantity tube 95 auirf7343q tape and reel 4000 AUIRF7343QTR base part number package type standard pack orderable part number so-8 auirf7343q downloaded from: http:/// !"# $ % &'#()%*&+ % & (, %-./ 0" # $ % &'#()% 1+ % & (, %"2-/ 0 2113 4 5"- ( 61 !"# , -./(7 1/73(8 8 ($ 6&1'# 0"# , "2-/(7 "6&1/73(8 8 ($ 6&1'# static electrical characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units n-ch 55 CCC CCC p-ch -55 CCC CCC n-ch CCC 0.059 CCC p-ch CCC 0.054 CCC CCC 0.043 0.050 CCC 0.056 0.065 CCC 0.095 0.105 CCC 0.150 0.170 n-ch 1.0 CCC CCC p-ch -1.0 CCC CCC n-ch 7.9 CCC CCC p-ch 3.3 CCC CCC n-ch CCC CCC 2.0 p-ch CCC CCC -2.0 n-ch CCC CCC 25 p-ch CCC CCC -25 i gss gate-to-source forward leakage CCC CCC 100 dynamic electrical characteristics @ tj = 25c (unless otherwise stated) parameter min. typ. max. units n-ch CCC 24 36 p-ch CCC 26 38 n-ch CCC 2.3 3.4 p-ch CCC 3.0 4.5 n-ch CCC 7.0 10 i d = -3.1a v ds = -44v, v gs =-10v p-ch CCC 8.4 13 n-ch CCC 8.3 12 p-ch CCC 14 22 n-ch CCC 3.2 4.8 p-ch CCC 10 15 n-ch CCC 32 48 p-ch CCC 43 64 n-ch CCC 13 20 p-ch CCC 22 32 n-ch CCC 740 CCC p-ch CCC 690 n-ch CCC 190 CCC p-ch CCC 210 n-ch CCC 71 CCC vgs = 0v, v ds = -25v, f =1.0mhz p-ch CCC 86 diode characteristics parameter min. typ. max. units i s continuous source current n-ch CCC CCC 2.0 (body diode) p-ch CCC CCC -2.0 i sm pulsed source current n-ch CCC CCC 38 (body diode) p-ch CCC CCC -27 n-ch CCC 0.70 1.2 p-ch CCC -0.80 -1.2 n-ch CCC 60 90 p-ch CCC 54 80 n-ch CCC 120 170 p - c h C C C8 51 3 0 v gs = -4.5v, i d = -2.7a v ds = v gs , i d = -250 a v ds = -10v, i d = -3.1a v ds = -55v, v gs = 0v v gs = 0v, i d = -250 a reference to 25c, i d = -1ma v gs = 4.5v, i d = 3.8a v gs = -10v, i d = -3.4a v v/c v vgs = 0v, v ds = 25v, f =1.0mhz p-channel ns v dd = 28v, id=1.0a, rg = 6.0 p-channel r d = 28 v ns nc t j = 25c, i f = 2.0a di/dt = 100a/ s ? t j = 25c, i f = -2.0a di/dt = 100a/ s ? t j = 25c, i s = -2.0a, v gs = 0v pf c iss c oss c rss input capacitance output capacitance reverse transfer capacitance fall time turn-on delay time rise time turn-off delay time t d(on) t r t d(off) t f q gs gate-to-source charge q gd gate-to-drain ("miller") charge drain-to-source leakage current i dss q g total gate charge v gs(th) gate threshold voltage gfs forward transconductance r ds(on) static drain-to-source on-resistance n-ch p-ch v (br)dss drain-to-source breakdown voltage ? v (br)dss / ? t j breakdown voltage temp. coefficient a nc a na i d = 4.5a v ds = 44v, v gs =10v p-channel v ds = 55v, v gs = 0v, t j = 55c v sd t rr q rr diode forward voltage reverse recovery time reverse recovery charge v ds = 10v, i d = 4.5a n-channel v gs = 20v conditions n-channel r d = 28 v dd = -28v, id=-1.0a, rg = 6.0 s t j = 25c, i s = 2.0a, v gs = 0v n-channel p-channel conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 4.7a v ds = v gs , i d = 250 a v ds = 55v, v gs = 0v v ds = -55v, v gs = 0v, t j = 55c conditions n-channel downloaded from: http:/// 1 10 100 3 4 5 6 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j ! " ! !# $! % 0.1 1 10 100 0.2 0.5 0.8 1.1 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 150 c j t = 25 c j 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 12v 10v 8.0v 6.0v 4.0v 3.5v 3.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 3.0v downloaded from: http:/// &! ' "( $ ) *+, - % $ ) "( $ ) "( $ ). $! % (9 " " : ( ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 4.7a 25 50 75 100 125 150 0 40 80 120 160 200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 2.1a 3.8a 4.7a 0.04 0.06 0.08 0.10 0.12 024681 0 a gs v , gate-to-source voltage (v) i = 4.7a d 0 10 20 30 40 0.040 0.060 0.080 0.100 0.120 r , drain-to-source on resistance i , drain current (a) d ds (on) vgs = 10v vgs = 4.5v downloaded from: http:/// 1 10 100 0 200 400 600 800 1000 1200 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss *- , / 0 ! "!"+ . % $ ) . "!"! $! % $ ) "!"! $! % 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 4.5a v = 12v ds v = 30v ds v = 48v ds 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) downloaded from: http:/// ! " ! !# $! % 1 10 100 3 4 5 6 7 v = -25v 20 s pulse width ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j 0.1 1 10 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 150 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v 0.1 1 10 100 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs -15v -12v -10v -8.0v -6.0v -4.0v -3.5v -3.0v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -3.0v downloaded from: http:/// &! ' "( $ ) *+, - % $ ) "( $ ) "( $ ). $! % -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -3.4 a 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -1.5a -2.7a -3.4a (9 " " : ( ) 0.05 0.15 0.25 0.35 0.45 2581 11 4 a gs -v , gate-to-source voltage (v) i = -3.4 a d 0 2 4 6 8 10 12 0.080 0.120 0.160 0.200 0.240 r , drain-to-source on resistance -i , drain current (a) d ds (on) vgs = -4.5v vgs = -10v downloaded from: http:/// 0 10 20 30 40 0 4 8 12 16 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs i = d -3.1a v = -12v ds v = -30v ds v = -48v ds . % $ ) . "!"! $! % $ ) "!"! $! % *- , / 0 ! "!"+ 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) 1 10 100 0 240 480 720 960 1200 -v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss downloaded from: http:/// so-8 package outlinedimensions are shown in millimeters (inches) so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 basic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches min max dim 8 e c .0075 .0098 0.19 0.25 .025 basic 0.635 basic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] c a b e1 a a1 8x b c 0.10 [.004] 4 3 12 f oot p r i nt 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. ou t l i ne conf or ms t o j e de c ou t l i ne ms - 012 aa. not e s : 1. dimens ioning & tolerancing per asme y14.5m-1994. 2. cont rol l ing dime ns ion: mil l ime t e r 3. dime ns ions are s hown in mil l ime t e rs [inche s ]. 5 dime ns ion doe s not incl u de mol d pr ot ru s ions . 6 dime ns ion doe s not incl u de mol d pr ot ru s ions . mold protrus ions not to exceed 0.25 [.010]. 7 dimens ion is t he lengt h of lead for soldering to a s ubst rat e. mold protrus ions not to exceed 0.15 [.006]. 8x 1.78 [.070] downloaded from: http:/// 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reeldimensions are shown in millimeters (inches) downloaded from: http:/// qualification information ? so-8 msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (1125v) ??? (per aec-q101-005) moisture sensitivity level rohs compliant yes esd machine model class m2 (200v) ??? (per aec-q101-002) human body model class h1a (500v) ??? (per aec-q101-001) ? qualification standards can be found at international rectifiers web site: http//www.irf.com/ ?? exceptions (if any) to aec-q101 requirements are noted in the qualification report. ??? highest passing voltage downloaded from: http:/// unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reservethe right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. all products are sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs standard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. ir assumes no liability for applications assistance or customer product design. customers are responsible for their products and applications using ir components. to minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterati ons is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information ofthird parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive businesspractice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any suchunintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product.only products certified as military grade by the defense logistics agency (dla) of the us department of defense, are designed and manufactured to meet dla military specifications required by certain military, aerospace or other applications. buyers acknowledge and agree that any use of ir products not certified by dla as military-grade, in applications requiring military gr ade products, is solely at the buyers own risk and that they are solely responsible for compliance with all legal and regulatoryrequirements in connection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir product s are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au.buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements. for technical support, please contact irs technical assistance center http://www.irf.com/technical-info/ world headquarters: 101 n. sepulveda blvd., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:/// date comments ? added "logic level gate drive" bullet in the features section on page 1 ? updated data sheet with new ir corporate template revision history 3/10/2014 downloaded from: http:/// |
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